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HM4264 - N-Channel Enhancement Mode Power MOSFET

General Description

The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.3mΩ).
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Low gate to drain charge to reduce switching losses Schematic diagram.

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Other Datasheets by H&M Semiconductor

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HM4264A N-Channel Enhancement Mode Power MOSFET
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 HM4264 N-Channel Enhancement Mode Power MOSFET Description The +0 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12A RDS(ON) < 11mΩ @ VGS=10V (Typ:8.6mΩ) RDS(ON) < 14mΩ @ VGS=4.5V (Typ:10.