Datasheet4U Logo Datasheet4U.com

HM4453A - P-Channel Enhancement Mode Power MOSFET

General Description

The HM4453A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a load switch or in PWM applications.

Key Features

  • VDS = -20V,ID = -21A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM4454 N-Channel 100V MOSFET VBsemi
HM44 NPN EPITAXIAL PLANAR TRANSISTOR Hi-Sincerity Mocroelectronics
HM4430 N-Channel 30V MOSFET VBsemi
HM4487 P-Channel 100V MOSFET VBsemi
HM4488 N-Channel 150-V MOSFET VBsemi

Other Datasheets by H&M Semiconductor

Part Number Description
HM4453 P-Channel Enhancement Mode Power MOSFET
HM4453B P-Channel Enhancement Mode Power MOSFET
HM4453C P-Channel Enhancement Mode Power MOSFET
HM4450 N-Channel Enhancement Mode Power MOSFET
HM4450A N-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HM4453A P-Channel Enhancement Mode Power MOSFET Description The HM4453A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -20V,ID = -21A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.