HM4485B - P-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

General Description

The HM4485B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications.

Key Features

VDS = -40V,ID = -7.5A RDS(ON).

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HM4485B p-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM4485B
Manufacturer	H&M Semiconductor
File Size	444.42 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	HM4485B Datasheet

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Other Datasheets by H&M Semiconductor

Part Number	Description
HM4485	P-Channel Enhancement Mode Power MOSFET
HM4485A	P-Channel Enhancement Mode Power MOSFET
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HM4485E	MOSFET
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HM4485B P-Channel Enhancement Mode Power MOSFET Description The HM4485B uses advanced trench technology to provide excellent RDS(ON), This device is suitable for use as a load switch or in PWM applications. General Features ● VDS = -40V,ID = -7.5A RDS(ON) <42mΩ @ VGS=-10V RDS(ON) <70mΩ @ VGS=-4.