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HM45N02D - MOSFET

General Description

The HM45N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =20V,ID =45A RDS(ON).

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM45N02D Description The HM45N02D uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =20V,ID =45A RDS(ON) <5.5mΩ @ VGS=4.