• Part: HM4806B
  • Description: Dual N-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 397.76 KB
Download HM4806B Datasheet PDF
H&M Semiconductor
HM4806B
Description The HM4806B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features - VDS =20V,ID =21A RDS(ON) < 5.5mΩ @ VGS=4.5V RDS(ON) < 9mΩ @ VGS=2.5V - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current Application - DC/DC Converter - Notebook Vcore Schematic diagram HM4806B Marking and pin Assignment SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package SOP-8 Reel Size Ø330mm Tape width 12mm Quantity 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TA=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Operating Junction and Storage Temperature Range IDM PD TJ,TSTG Limit 30 ±20 21 8 40 2.5 -55 To...