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HM4806B - Dual N-Channel Enhancement Mode Power MOSFET

General Description

The HM4806B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =20V,ID =21A RDS(ON) < 5.5mΩ @ VGS=4.5V RDS(ON) < 9mΩ @ VGS=2.5V.
  • High density cell design for ultra low Rdson.
  • Fully characterized Avalanche voltage and current.

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HM4806B Dual N-Channel Enhancement Mode Power MOSFET Description The HM4806B uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ●VDS =20V,ID =21A RDS(ON) < 5.5mΩ @ VGS=4.5V RDS(ON) < 9mΩ @ VGS=2.