HM4826A - Dual N-Channel Enhancement Mode Power MOSFET

H&M Semiconductor

General Description

The HM4826A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

VDS = 60V,ID =12.5A RDS(ON).

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HM4826A dual n-channel enhancement mode power mosfet by H&M Semiconductor - Datasheet Preview

Datasheet Details

Part number	HM4826A
Manufacturer	H&M Semiconductor
File Size	714.03 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	HM4826A Datasheet

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HM4826A Dual N-Channel Enhancement Mode Power MOSFET Description The HM4826A uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS = 60V,ID =12.