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HM4805 - Dual P-Channel Enhancement Mode Power MOSFET

General Description

The HM4805 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Key Features

  • VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Other Datasheets by H&M Semiconductor

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HM4805A Dual P-Channel Enhancement Mode Power MOSFET
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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HM4805 Dual P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM4805 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -9.1A RDS(ON) < 35mΩ @ VGS=-4.