The +03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge .This device is well suited for high current load applications.
| Part number | HM50P06 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 423.18 KB |
| Description | P-Channel Enhancement Mode Power MOSFET |
| Datasheet |
 HM50P06 Datasheet
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| Part Number | Description | Manufacturer |
|---|---|---|
| HM50P03 | P-Channel MOSFET | H&M semi |
| HM50 | HM50 / HM51 Series / Miniature Power Inductors | BI Technologies |
| HM50-xxx | HM50 / HM51 Series / Miniature Power Inductors | BI Technologies |
| HM500 | HM500 Series / Ac/Dc Switching Modules | Artesyn Technologies |
| HM50256 | 262144 X 1-Bit DRAM | Hitachi |
| Part Number | Description |
|---|---|
| HM50P06K | P-Channel Enhancement Mode Power MOSFET |
| HM50P02K | P-Channel Enhancement Mode Power MOSFET |
| HM50P03D | P-Channel Enhancement Mode Power MOSFET |
| HM50P03K | P-Channel Enhancement Mode Power MOSFET |
| HM50P35DE | MOSFET |
The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.
