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HM50P03 - P-Channel MOSFET

General Description

The HM50P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Key Features

  • VDS = -30V,ID = -50A RDS(ON) < 17mΩ @ VGS=-4.5V RDS(ON) < 10mΩ @ VGS=-10V.
  • High Power and current handing capability.
  • Lead free product is acquired.
  • Surface Mount Package.

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Full PDF Text Transcription (Reference)

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HM50P03 P-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM50P03 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. GENERAL FEATURES ● VDS = -30V,ID = -50A RDS(ON) < 17mΩ @ VGS=-4.