Datasheet4U Logo Datasheet4U.com

HM603K - N&P-Channel complementary Power MOSFET

General Description

The HM603K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • N channel.
  • VDS =60V,ID =20A RDS(ON).

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HM60 PRECISION METAL FILM RESISTORS RCD
HM6-6617B883 2K x 8 CMOS PROM Intersil Corporation
HM6-6642-9 512 x 8 CMOS PROM Intersil Corporation
HM6-6642B-9 512 x 8 CMOS PROM Intersil Corporation
HM6116 2048-word X 8bit High Speed CMOS Static RAM Hitachi Semiconductor

Other Datasheets by H&M Semiconductor

Part Number Description
HM605K N&P-Channel V Complementary MOSFET
HM607K N&P-Channel V Complementary MOSFET
HM609K N&P-Channel V Complementary MOSFET
HM60N02 MOSFET
HM60N02K MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
N&P-Channel complementary Power MOSFET Description The HM603K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features N channel ● VDS =60V,ID =20A RDS(ON) <30mΩ @ VGS=10V RDS(ON) <35mΩ @ VGS=4.5V p channel ● VDS =-60V,ID =-15A RDS(ON) <85mΩ @ VGS=-10V RDS(ON) <135mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dissipation ● Special process technology for high ESD capability Application ● H-bridge ● Inverters HM. Schematic diagram HM.