HM609K Description
The HM609K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM609K Key Features
- VDS =-40V,ID =-18A RDS(ON) <45mΩ @ VGS=-10V RDS(ON) <65mΩ @ VGS=-4.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- H-bridge
- Inverters
- Tape width
- Quantity