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HM60N03 - N-Channel Enhancement Mode Power MOSFET

Description

The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

  • VDS =30V,ID =60A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.5V Schematic diagram.
  • High density cell design for ultra low Rdson.
  • Fully characterized avalanche voltage and current.
  • Good stability and uniformity with high EAS.
  • Excellent package for good heat dissipation.
  • Special process technology for high ESD capability HM60N03.

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Datasheet preview – HM60N03

Datasheet Details

Part number HM60N03
Manufacturer H&M Semiconductor
File Size 677.66 KB
Description N-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet HM60N03 Datasheet
Additional preview pages of the HM60N03 datasheet.

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Full PDF Text Transcription

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HM60N03 N-Channel Enhancement Mode Power MOSFET Description The HM60N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =30V,ID =60A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 13mΩ @ VGS=4.
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