Datasheet Details
| Part number | HM60N06 |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 377.08 KB |
| Description | Power MOSFET |
| Datasheet |
 HM60N06 Datasheet
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General Description
The HM60N06 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
It can be used in a wide variety of applications.
Key Features
- VDS = 60V,ID =60A RDS(ON) < 12mΩ @ VGS=10V (Typ:10.2mΩ).
- Special process technology for high ESD capability.
- High density cell design for ultra low Rdson.
- Fully characterized avalanche voltage and current.
- Good stability and uniformity with high EAS.
- Excellent package for good heat dissipation.