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HM60N06K

Manufacturer: H&M Semiconductor

HM60N06K datasheet by H&M Semiconductor.

HM60N06K datasheet preview

HM60N06K Datasheet Details

Part number HM60N06K
Datasheet HM60N06K-HMSemiconductor.pdf
File Size 465.25 KB
Manufacturer H&M Semiconductor
Description MOSFET
HM60N06K page 2 HM60N06K page 3

HM60N06K Overview

The HM60N06K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM60N06K Key Features

  • VDS = 60V,ID =60A RDS(ON) < 12mΩ @ VGS=10V
  • Special process technology for high ESD capability
  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Power switching application
  • Hard switched and High frequency circuits
  • Uninterruptible power supply
  • Tape width
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HM60N06K Distributor

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