HM7000
FEATURE z High density cell design for low RDS(ON) z Voltage controlled small signal switch z Rugged and reliable z High saturation current capability
MARKING
APPLICATION z Load Switch for Portable Devices z DC/DC Converter
Equivalent Circuit
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Parameter Drain-Source Voltage Continuous Drain Current Power Dissipation Thermal Resistance from Junction to Ambient Junction Temperature Storage Temperature
Symbol VDS ID PD RθJA TJ Tstg
Value 60 0.2 0.625 200 150 -55 ~+150
Unit V A W ℃/W
℃
MOSFET ELECTRICAL CHARACTERISTICS
Ta=25 ℃ unless otherwise specified
Parameter
Symbol
Test conditions
Drain-Source Breakdown Voltage Gate-Threshold Voltage- Gate-body Leakage Zero Gate Voltage Drain Current On-state Drain Current
V(BR)DSS V(GS)th l GSS IDSS ID(ON)
Drain-Source On-Resistance-
RDS(on)
Forward Trans conductance- gfs
Drain-source on-voltage-
VDS(on)
Input Capacitance
- - Output Capacitance
- - Reverse Transfer Capacitance
- - Turn-on...
