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HM830 - 500V N-Channel MOSFET

Datasheet Summary

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

  • 5.0A, 500V, RDS(on) = 1.50Ω @VGS = 10 V.
  • Low gate charge ( typical 20nC).
  • Fast switching.
  • 100% avalanche tested.
  • Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
  • ◀▲ {G.
  • {S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Si.

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Datasheet Details

Part number HM830
Manufacturer H&M Semiconductor
File Size 324.38 KB
Description 500V N-Channel MOSFET
Datasheet download datasheet HM830 Datasheet
Additional preview pages of the HM830 datasheet.

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Full PDF Text Transcription

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+0830 / +0830) 500V N-Channel MOSFET General Description This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features • 5.0A, 500V, RDS(on) = 1.
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