HM830F - 500V N-Channel MOSFET

This page provides the datasheet information for the HM830F, a member of the HM830 500V N-Channel MOSFET family.

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HM830F
Manufacturer	H&M Semiconductor
File Size	324.38 KB
Description	500V N-Channel MOSFET
Datasheet	HM830F Datasheet
Additional preview pages of the HM830F datasheet.

HM830F Product details

Description

This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

Features

5.0A, 500V, RDS(on) = 1.50Ω @VGS = 10 V.
Low gate charge ( typical 20nC).
Fast switching.
100% avalanche tested.
Improved dv/dt capability {D GDS TO-220 GD S TO-220F.
◀▲ {G.
{S Absolute Maximum Ratings TC = 25°Cunless otherwise noted Symbol Parameter VDSS Drain-Source Voltage ID Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) IDM Drain Current - Pulsed (Note 1) VGSS Gate-Source Voltage EAS Si.

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Published: Jun 30, 2025 |