HM9926 - Dual N-Channel Enhancement Mode Power MOSFET

Description

The HM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =20V,ID =6A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.5V Schematic diagram.
High density cell design for ultra low Rdson.
Fully characterized Avalanche voltage and current.

H&M Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	HM9926
Manufacturer	H&M Semiconductor
File Size	384.20 KB
Description	Dual N-Channel Enhancement Mode Power MOSFET
Datasheet	HM9926 Datasheet
Additional preview pages of the HM9926 datasheet.

📁 Similar Datasheet

HM9100A1 - TOUCH PULSE DIALER (ETC)
HM9100B1 - TOUCH PULSE DIALER (ETC)
HM9100C1 - TOUCH PULSE DIALER (ETC)
HM9101AY - TONE/PULSE SWITCHABLE DIALER (ETC)
HM9101BY - TONE/PULSE SWITCHABLE DIALER (ETC)
HM9102 - TONE/PULSE SWITCHABLE DIALER (ETC)
HM9102A - TONE/PULSE SWITCHABLE DIALER (ETC)
HM9102C - TONE/PULSE SWITCHABLE DIALER (ETC)
HM9102D - TONE/PULSE SWITCHABLE DIALER (ETC)
HM9104 - TONE/PULSE SWITCHABLE & 4 MEMORY DIALER (ETC)

Other Datasheets by H&M Semiconductor

HM9926B - Dual N-Channel Enhancement Mode Power MOSFET
HM9902D - One Cell Lithium-ion/Polymer Battery Protection
HM90N02D - MOSFET
HM90N07D - N-Channel Trench Power MOSFET
HM90N07K - N-Channel Trench Power MOSFET
HM9435 - P-Channel Enhancement Mode Power MOSFET
HM9435A - P-Channel Enhancement Mode Power MOSFET
HM9435B - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text

HM9926 Dual N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM9926 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL FEATURES ● VDS =20V,ID =6A RDS(ON) < 30mΩ @ VGS=4.5V RDS(ON) < 40mΩ @ VGS=2.

Published: Jun 30, 2025 |