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HMN10N65D - 650V GaN Enhancement-mode Power Transistor

Product Overview

H&M Semiconductor

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HMN10N65D 650V GaN Enhancement-mode Power Transistor by H&M Semiconductor - Datasheet Preview — Datasheet preview – HMN10N65D

Datasheet Details

Part number	HMN10N65D
Manufacturer	H&M Semiconductor
File Size	4.39 MB
Description	650V GaN Enhancement-mode Power Transistor
Datasheet	HMN10N65D Datasheet
Additional preview pages of the HMN10N65D datasheet.

Product details

Description

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 8 mm × 8 mm size

Features

Enhancement-mode transistor - normally-OFF power switch.
Ultra-high switching frequency.
No reverse-recovery charge.
Low gate charge, low output charge.
Qualified for industrial.

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Other Datasheets by H&M Semiconductor

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Published: Jun 30, 2025 |