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HMN10N65D - 650V GaN Enhancement-mode Power Transistor

General Description

650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 8 mm × 8 mm size

Key Features

  • Enhancement-mode transistor - normally-OFF power switch.
  • Ultra-high switching frequency.
  • No reverse-recovery charge.
  • Low gate charge, low output charge.
  • Qualified for industrial.

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Other Datasheets by H&M Semiconductor

Part Number Description
HMN10N65Q 650V GaN Enhancement-mode Power Transistor
HMN11N65D 650V GaN Power Transistor

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HMN10N65D HMN10N65D 650V GaN Enhancement-mode Power Transistor General description 650V GaN-on-Silicon Enhancement-mode Power Transistor in Dual Flat No-lead Package (DFN) with 8 mm × 8 mm size Features • Enhancement-mode transistor - normally-OFF power switch • Ultra-high switching frequency • No reverse-recovery charge • Low gate charge, low output charge • Qualified for industrial applications according to JEDEC Standards • ESD safeguard • RoHS, Pb-free, REACH-compliant Applications • AC-DC converters • DC-DC converters • Totem pole PFC • Fast battery charging • High-density power conversion • High-efficiency power conversion Table 1 Key Performance Parameters at Tj = 25 oC Parameters VDS, max RDS(on), max QG, typ IDS, Pulse QOSS @ 400 V Qrr Values 650 200 2.