HMN11N65D - 650V GaN Power Transistor

Features

Easy to use, compatible with standard gate drivers.
Superior reliability with BVDSS over 1500V.
Excellent Qg x RDS(on) figure of merit (FOM).
Low Qrr, no free-wheeling diode required.
Low switching loss.
RoHS compliant and Halogen-free Product Summary VDSS 650 V RDS(on), typ 230 mΩ QG, typ 12.5 nC QRR, typ 38 nC.

H&M Semiconductor

Datasheet Details

Part number	HMN11N65D
Manufacturer	H&M Semiconductor
File Size	1.09 MB
Description	650V GaN Power Transistor
Datasheet	HMN11N65D Datasheet
Additional preview pages of the HMN11N65D datasheet.

📁 Similar Datasheet

HMN12816D - Non-Volatile SRAM MODULE 2Mbit (Hanbit)
HMN1288D - Non-Volatile SRAM MODULE 1Mbit (Hanbit)
HMN1288DV - Non-Volatile SRAM MODULE 1Mbit (Hanbit)
HMN1288J - Non-Volatile SRAM MODULE 1Mbit (Hanbit)
HMN1M8D - Non-Volatile SRAM (Hanbit Electronics)
HMN1M8DN - Non-Volatile SRAM (Hanbit Electronics)
HMN1M8DV - Non-Volatile SRAM (Hanbit Electronics)
HMN1M8DVN - Non-Volatile SRAM (Hanbit Electronics)
HMN2568D - Non-Volatile SRAM (Hanbit Electronics)
HMN28D - Non-Volatile SRAM (Hanbit Electronics)

Other Datasheets by H&M Semiconductor

HMN10N65D - 650V GaN Enhancement-mode Power Transistor
HMN10N65Q - 650V GaN Enhancement-mode Power Transistor

Full PDF Text Transcription

Click to expand full text

.344* 650V GaN Power Transistor (FET) Features • Easy to use, compatible with standard gate drivers • Superior reliability with BVDSS over 1500V • Excellent Qg x RDS(on) figure of merit (FOM) • Low Qrr, no free-wheeling diode required • Low switching loss • RoHS compliant and Halogen-free Product Summary VDSS 650 V RDS(on), typ 230 mΩ QG, typ 12.

Published: Jun 22, 2025 |