HMN11N65D Description
.34燦燦4燫燪 650V GaN Power Transistor (FET).
HMN11N65D Key Features
- Easy to use, patible with standard gate drivers
- Superior reliability with BVDSS over 1500V
- Excellent Qg x RDS(on) figure of merit (FOM)
- Low Qrr, no free-wheeling diode required
- Low switching loss
- RoHS pliant and Halogen-free