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HMN11N65D - 650V GaN Power Transistor

Key Features

  • Easy to use, compatible with standard gate drivers.
  • Superior reliability with BVDSS over 1500V.
  • Excellent Qg x RDS(on) figure of merit (FOM).
  • Low Qrr, no free-wheeling diode required.
  • Low switching loss.
  • RoHS compliant and Halogen-free Product Summary VDSS 650 V RDS(on), typ 230 mΩ QG, typ 12.5 nC QRR, typ 38 nC.

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Other Datasheets by H&M Semiconductor

Part Number Description
HMN10N65D 650V GaN Enhancement-mode Power Transistor
HMN10N65Q 650V GaN Enhancement-mode Power Transistor

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.344* 650V GaN Power Transistor (FET) Features • Easy to use, compatible with standard gate drivers • Superior reliability with BVDSS over 1500V • Excellent Qg x RDS(on) figure of merit (FOM) • Low Qrr, no free-wheeling diode required • Low switching loss • RoHS compliant and Halogen-free Product Summary VDSS 650 V RDS(on), typ 230 mΩ QG, typ 12.