HMS125N10D - N-Channel Super Trench II Power MOSFET

Product Overview

H&M Semiconductor

Part number	HMS125N10D
Manufacturer	H&M Semiconductor
File Size	518.23 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS125N10D Datasheet
Additional preview pages of the HMS125N10D datasheet.

The HMS125N10D uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

VDS =100V,ID =125A RDS(ON)=3.8mΩ (typical) @ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS125N10D HMS125N10D DFN5X6-8L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise.

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Published: Jul 1, 2025 |