HMS100N20 - N-Channel Super Trench II Power MOSFET

Product Overview

H&M Semiconductor

Datasheet Details

Part number	HMS100N20
Manufacturer	H&M Semiconductor
File Size	824.73 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS100N20 Datasheet
Additional preview pages of the HMS100N20 datasheet.

Product details

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.This device is ideal for high-frequency switching and synchronous rectification.Application DC/DC Converter Ideal for high-frequency switching and synchronous rectification General

Features

VDS =200V,ID =100A RDS(ON)=9.3mΩ , typical (TO-220)@ VGS=10V RDS(ON)=9.3mΩ , typical (TO-263)@ VGS=10V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS100N20 HMS100N20 TO-220 HMS100N20D HMS100N20D TO-263 Reel Size - Tape width -.

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Published: Jun 30, 2025 |