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HMS12864F8V - SRAM

General Description

The HMS12864F8V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x 64-bit configuration.

The module consists of four 128K x 8 SRAMs mounted on a 120-pin, both-sided, FR4-printed circuit board.

Key Features

  • w Access times : 12, 15 and 20ns w High-density 1MByte design w High-reliability, high-speed design w Single + 3.3V ±0.3V power supply w Easy memory expansion with /CE and /OE functions w All inputs and outputs are TTL-compatible w Industry-standard pin-out www. DataSheet4U. com w FR4-PCB design PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Symbol Vcc DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 Vcc DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 Vcc /WE0 /WE1 /WE2 /WE3.

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Datasheet Details

Part number HMS12864F8V
Manufacturer Hanbit Electronics
File Size 118.43 KB
Description SRAM
Datasheet download datasheet HMS12864F8V Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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HANBit HMS12864F8V SRAM MODULE 1MByte (128K x 64 bit), 120-Pin SMM, 3.3V Part No. HMS12864F8V GENERAL DESCRIPTION The HMS12864F8V is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x 64-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 120-pin, both-sided, FR4-printed circuit board. Byte write enable inputs,(/WE0,/WE1,/WE2,/WE3,/WE4,/WE5,/WE6,/WE7) are used to enable the module’s 8 bits independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.