Datasheet4U Logo Datasheet4U.com

HMS12864F8VL - SRAM

General Description

The HMS12864F8VL is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x 64-bit configuration.

The module consists of eight 128K x 8 SRAMs mounted on a 120-pin, both-sided, FR4-printed circuit board.

Key Features

  • w Access times : 70 and 100ns w High-density 1MByte design w High-reliability, high-speed design w Single + 3.3V ±0.3V power supply w Easy memory expansion with /CE and /OE functions w All inputs and outputs are TTL-compatible w Industry-standard pin-out w FR4-PCB design www. DataSheet4U. com PIN 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 Vcc DQ32 DQ33 DQ34 DQ35 DQ36 DQ37 DQ38 DQ39 Vcc DQ40 DQ41 DQ42 DQ43 DQ44 DQ45 DQ46 DQ47 Vcc /WE0 /WE1 /WE2 /WE3 /WE4 Vcc /W.

📥 Download Datasheet

Datasheet Details

Part number HMS12864F8VL
Manufacturer Hanbit Electronics
File Size 114.65 KB
Description SRAM
Datasheet download datasheet HMS12864F8VL Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
HMS120N03D N-Channel Super Trench Power MOSFET H&M Semiconductor
HMS120N10 N-Channel Super Trench II Power MOSFET H&M Semiconductor
HMS120N10D N-Channel Super Trench II Power MOSFET H&M Semiconductor
HMS120N85 N-Channel Super Trench II Power MOSFET H&M Semiconductor
HMS120N85D N-Channel Super Trench II Power MOSFET H&M Semiconductor

Other Datasheets by Hanbit Electronics

Part Number Description
HMS12864F8V SRAM
HMS12832M4 SRAM
HMS12832M4G SRAM
HMS12832M4V SRAM
HMS12832Z4 SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HANBit HMS12864F8VL SRAM MODULE 1MByte (128K x 64 bit), 120-Pin SMM, 3.3V Part No. HMS12864F8VL GENERAL DESCRIPTION The HMS12864F8VL is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x 64-bit configuration. The module consists of eight 128K x 8 SRAMs mounted on a 120-pin, both-sided, FR4-printed circuit board. Byte write enable inputs,(/WE0,/WE1,/WE2,/WE3,/WE4,/WE5,/WE6,/WE7) are used to enable the module’s 8 bits independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW. accomplished when /WE remains HIGH and /CE and output enable (/OE) are LOW.