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HMS12832Z4 - SRAM

Download the HMS12832Z4 datasheet PDF. This datasheet also covers the HMS12832M4G variant, as both devices belong to the same sram family and are provided as variant models within a single manufacturer datasheet.

General Description

The HMS12832M4G/Z4 is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x32-bit configuration.

The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit board.

Key Features

  • w Access times : 10, 12, 15 and 20ns w High-density 512KByte design w High-reliability, high-speed design w Single + 5V ±0.5V power supply w Easy memory expansion with /CE and /OE functions w All inputs and outputs are TTL-compatible w Industry-standard pinout w FR4-PCB design www. DataSheet4U. com PIN.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (HMS12832M4G_HanbitElectronics.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number HMS12832Z4
Manufacturer Hanbit Electronics
File Size 161.25 KB
Description SRAM
Datasheet download datasheet HMS12832Z4 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
HANBit HMS12832M4G/Z4 SRAM MODULE 512KByte (128K x 32-Bit), 64PIN SIMM / ZIP Part No. HMS12832M4G, HMS12832Z4 GENERAL DESCRIPTION The HMS12832M4G/Z4 is a high-speed static random access memory (SRAM) module containing 131,072 words organized in a x32-bit configuration. The module consists of four 128K x 8 SRAMs mounted on a 64-pin, single-sided, FR4-printed circuit board. PD0 and PD1 identify the module’s density allowing interchangeable use of alternate density, industry- standard modules. Four chip enable inputs, (/CE1, /CE2, /CE3 and /CE4) are used to enable the module’s 4 bytes independently. Output enable(/OE) and write enable(/WE) can set the memory input and output. Data is written into the SRAM memory when write enable (/WE) and chip enable (/CE) inputs are both LOW.