HMS135N10G - N-Channel Super Trench II Power MOSFET

This page provides the datasheet information for the HMS135N10G, a member of the HMS135N10K N-Channel Super Trench II Power MOSFET family.

Product Overview

H&M Semiconductor

Part number	HMS135N10G
Manufacturer	H&M Semiconductor
File Size	1.30 MB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS135N10G Datasheet
Additional preview pages of the HMS135N10G datasheet.

switching performance.

RDS(ON) and Qg.

VDS =100V,ID =135A RDS(ON)=3.4mΩ , typical @ VGS=10V ID=1A RDS(ON)=3.9mΩ , typical @ VGS=10V ID=20A.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-252 DFN5X6-8L D DDD D DDD top view S SSG Top View G SSS Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS135N10K HMS135N10K TO-25.

Other Datasheets by H&M Semiconductor

Published: Jun 21, 2025 |