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HMS135N10K - N-Channel Super Trench II Power MOSFET

General Description

switching performance.

RDS(ON) and Qg.

Key Features

  • VDS =100V,ID =135A RDS(ON)=3.4mΩ , typical @ VGS=10V ID=1A RDS(ON)=3.9mΩ , typical @ VGS=10V ID=20A.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-252 DFN5X6-8L D DDD D DDD top view S SSG Top View G SSS Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS135N10K HMS135N10K TO-25.

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HMS135N10K, HMS135N10G N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =100V,ID =135A RDS(ON)=3.4mΩ , typical @ VGS=10V ID=1A RDS(ON)=3.