HMS160N10D Datasheet N-channel Super Trench Ii Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HMS160N10, HMS160N10D N-Channel Super Trench II Power MOSFET.

This datasheet includes multiple variants, all published together in a single manufacturer document.

Datasheet Details

Part number	HMS160N10D
Manufacturer	H&M Semiconductor
File Size	796.70 KB
Description	N-Channel Super Trench II Power MOSFET
Datasheet	HMS160N10D HMS160N10 Datasheet (PDF)

General Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

This device is ideal for high-frequency switching and synchronous rectification.

Key Features

VDS =100V,ID =160A RDS(ON)=2.7mΩ , typical @ VGS=10V ID=20A.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
175 °C operating temperature.
Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package HMS160N10 HMS160N10 TO-220 HMS160N10D HMS160N10D TO-263 Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=2.

HMS160N10D Distributor & Price

Compare HMS160N10D distributor prices and check real-time stock availability from major suppliers. Prices and inventory may vary by region and order quantity.

More Datasheets from H&M Semiconductor

Part Number	Description
HMS160N10	N-Channel Super Trench II Power MOSFET
HMS100N06KA	N-Channel Super Trench Power MOSFET
HMS100N15	N-Channel Super Trench Power MOSFET
HMS100N20	N-Channel Super Trench II Power MOSFET
HMS100N20D	N-Channel Super Trench II Power MOSFET
HMS100N85	N-Channel Super Trench II Power MOSFET
HMS100N85D	N-Channel Super Trench II Power MOSFET
HMS10DN10Q	Dual N-Channel Enhancement Mode MOSFET
HMS10N15D	N-Channel Super Trench Power MOSFET
HMS11N65D	650V Super-Junction MOSFET