HMS190N04D - N-Channel Super Trench Power MOSFET

Product Overview

H&M Semiconductor

Part number	HMS190N04D
Manufacturer	H&M Semiconductor
File Size	418.57 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	HMS190N04D Datasheet
Additional preview pages of the HMS190N04D datasheet.

The HMS190N04D uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

VDS =40V,ID =185A RDS(ON)=1.0mΩ (typical) @ VGS=10V RDS(ON)=1.4mΩ (typical) @ VGS=4.5V.
Excellent gate charge x RDS(on) product(FOM).
Very low on-resistance RDS(on).
150 °C operating temperature.
Pb-free lead plating.
100% UIS tested.

Other Datasheets by H&M Semiconductor

Published: Jul 1, 2025 |