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HMS7N80I Datasheet N-Channel Super Junction Power MOSFET

Manufacturer: H&M Semiconductor

Overview: HMS7N80I/HMS7N80K N-Channel Super Junction Power MOSFET Ⅲ General.

General Description

The series of devices use advanced trench gate super junction technology and design to provide excellent RDS(ON) with low gate charge.

This super junction MOSFET fits the industry’s AC-DC SMPS requirements for PFC, AC/DC power conversion, and industrial power applications.

Key Features

  • New technology for high voltage device.
  • Low on-resistance and low conduction losses.
  • Small package.
  • Ultra Low Gate Charge cause lower driving requirements.
  • 100% Avalanche Tested.
  • ROHS compliant VDS 800 V RDS(ON)TYP 840 mΩ ID 7 A.

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