• Part: HM02P30PR
  • Description: -300V P-Channel Enhancement Mode MOSFET
  • Category: MOSFET
  • Manufacturer: H&M Semiconductor
  • Size: 1.32 MB
Download HM02P30PR Datasheet PDF
H&M Semiconductor
HM02P30PR
Description The HM02P30PR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -300V ID =-0.2 A RDS(ON) < 17mΩ @ VGS=10V Application Battery protection Load switch Uninterruptible power supply G DS Marking and pin assignment Package Marking and Ordering Information Product ID Pack Marking SOT-89 Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Drain-Source Voltage VGS ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ Gate-Source Voltage Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 Total Power Dissipation3 TSTG Storage Temperature Range Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient 1 RθJC Thermal Resistance Junction-Case1 Qty(PCS) 3000 Rating...