HM02P30R Overview
The HM02P30R uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
-300v P-channel Enhancement Mode MOSFET
| Part number | HM02P30R |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 1.25 MB |
| Description | -300V P-Channel Enhancement Mode MOSFET |
| Datasheet | HM02P30R-HMSemiconductor.pdf |
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The HM02P30R uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
See all H&M Semiconductor datasheets
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