HM10N60F
Description
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
Features
- 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
- Low gate charge ( typical 48n C)
- High ruggedness
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
{D
TO-220
GD S
TO-220F
- ◀▲
{G
- -
{S
Absolute Maximum Ratings TC = 25°Cunless otherwise noted
Symbol
Parameter
VDSS
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current
- Pulsed
(Note 1)
VGSS
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)...
