HM10N65F Overview
This Power MOSFET is produced using SL semi‘s advanced planar stripe DMOS technology. This advanced technology has been espe cially tailored to minimize o n-state r esistance, pr ovide superior switching performance, and withstand high ener gy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency sw itched mode power supp lies, active power factor corr ection based on half br...
HM10N65F Key Features
- 10A, 650V, RDS(on) = 1.09Ω @VGS = 10 V
- Low gate charge ( typical 52nC)
- High ruggedness
- Fast wsitching
- 100% avalanche tested
- Improved dv/dt capability