Datasheet Details
| Part number | HM10N80A |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 807.85 KB |
| Description | N-channel Enhanced VDMOSFET |
| Datasheet | HM10N80A-HMSemiconductor.pdf |
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Overview: HM10N80A General.
| Part number | HM10N80A |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 807.85 KB |
| Description | N-channel Enhanced VDMOSFET |
| Datasheet | HM10N80A-HMSemiconductor.pdf |
|
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： VDSS 800 HM10N80A, the silicon N-channel Enhanced ID 10 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 60 which reduce the conduction loss, improve switching RDS(ON)Typ 0.72 performance and enhance the avalanche energy.
The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
The package form is TO-3P, which accords with the RoHS standard.
| Part Number | Description |
|---|---|
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| HM10N65D | 650V N-Channel MOSFET |
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| HM100N03 | N-Channel Enhancement Mode Power MOSFET |
| HM100N03D | N-Channel Enhancement Mode Power MOSFET |
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