HM10N80F datasheet by H&M Semiconductor.
| Part number | HM10N80F |
|---|---|
| Datasheet | HM10N80F-HMSemiconductor.pdf |
| File Size | 674.38 KB |
| Manufacturer | H&M Semiconductor |
| Description | N-channel Enhanced VDMOSFET |
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： VDSS 800 HM10N80F , the silicon N-channel Enhanced ID 10 VDMOSFETs, is obtained by the self-aligned planar Technology PD(TC=25℃) 60 which reduce the conduction loss, improve switching RDS(ON)Typ 0.72 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the RoHS...
View all H&M Semiconductor datasheets
| Part Number | Description |
|---|---|
| HM10N80A | N-channel Enhanced VDMOSFET |
| HM10N10K | N-Channel Enhancement Mode Power MOSFET |
| HM10N15D | N-Channel Enhancement Mode Power MOSFET |
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| HM10N60F | 600V N-Channel MOSFET |
| HM10N65D | 650V N-Channel MOSFET |
| HM10N65F | 650V N-Channel MOSFET |
| HM100N03 | N-Channel Enhancement Mode Power MOSFET |
| HM100N03D | N-Channel Enhancement Mode Power MOSFET |
| HM100N03GA | N-Channel Enhancement Mode Power MOSFET |
