HM10N80F
Description
：
VDSS
HM10N80F , the silicon N-channel Enhanced
VDMOSFETs, is obtained by the self-aligned planar Technology
PD(TC=25℃)
60 which reduce the conduction loss, improve switching
RDS(ON)Typ
0.72 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is TO-220F, which accords with the Ro HS standard.
Features
： l Fast Switching l ESD Improved Capability l Low Gate Charge (Typical Data: 65n C) l Low Reverse transfer capacitances(Typical: 25p F) l 100% Single Pulse avalanche energy Test
Applications：
Power switch circuit of PC POWER.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
Rating
VDSS
IDMa1 VGS EAS EAR a1 IAR a1 dv/dt a2
VESD(G-S)
TJ，Tstg TL
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche...
