HM12N20D Description
The HM1' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM12N20D Key Features
- VDS =200V,ID =A RDS(ON) < 80mΩ @ VGS=10V
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
- Tape width