HM12N20D
HM12N20D is N-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
HM1'
N-Channel Enhancement Mode Power MOSFET
DESCRIPTION
The HM1' uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
GENERAL Features
- VDS =200V,ID =A RDS(ON) < 80mΩ @ VGS=10V
(Typ:63mΩ)
- High density cell design for ultra low Rdson
- Fully characterized Avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
- Special process technology for high ESD capability
Application
- Power switching application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
Schematic diagram Marking and pin assignment
100% UIS TESTED! 100% ΔVds TESTED!
Package Marking And Ordering Information
Device Marking
Device
Device Package
HM1'
HM1'
')1;/
Reel Size
- Tape width
- Quantity
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