HM13P10
Description
The HM13P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. It is ESD protested.
General Features
- VDS =-100V,ID =-13A RDS(ON) <200mΩ @ VGS=-10V
(Typ:170mΩ)
- Super high dense cell design
- Advanced trench process technology
- Reliable and rugged
- High density celldesign for ultra low on-resistance
Application
- Power switch
- DC/DC converters
Schematic diagram
Marking and pin assignment
100% UIS TESTED! 100% ∆Vds TESTED!
TO-220-3L top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-220-3L
Reel Size
- Tape width
- Quantity
- Absolute Maximum Ratings (TC=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
ID (100℃)
Pulsed Drain Current
Maximum Power Dissipation
Derating...
