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HM13P10 Datasheet

P-channel Enhancement Mode Power MOSFET

Manufacturer: H&M Semiconductor

HM13P10 Overview

The HM13P10 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM13P10 Key Features

  • VDS =-100V,ID =-13A RDS(ON) <200mΩ @ VGS=-10V
  • Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged
  • High density celldesign for ultra low on-resistance
  • Power switch
  • DC/DC converters
  • Tape width
  • Quantity

HM13P10 Distributor