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HM13P10K

Manufacturer: H&M Semiconductor

HM13P10K datasheet by H&M Semiconductor.

HM13P10K datasheet preview

HM13P10K Datasheet Details

Part number HM13P10K
Datasheet HM13P10K-HMSemiconductor.pdf
File Size 436.28 KB
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
HM13P10K page 2 HM13P10K page 3

HM13P10K Overview

The HM13P10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM13P10K Key Features

  • VDS =-100V,ID =-13A RDS(ON) <200mΩ @ VGS=-10V
  • Super high dense cell design
  • Advanced trench process technology
  • Reliable and rugged
  • High density celldesign for ultra low on-resistance
  • Power switch
  • DC/DC converters
  • Tape width
  • Quantity
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HM13P10K Distributor

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