Datasheet Details
| Part number | HM1404B |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 560.57 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HM1404B-HMSemiconductor.pdf |
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Overview: +0% 40VDS／±20VGS／130A(ID) N-Channel Enha ncement Mode MOSFET.
| Part number | HM1404B |
|---|---|
| Manufacturer | H&M Semiconductor |
| File Size | 560.57 KB |
| Description | N-Channel Enhancement Mode MOSFET |
| Datasheet | HM1404B-HMSemiconductor.pdf |
|
|
|
Switching Time Test Circuit and Waveforms +0% Marking and pin Assignment TO-220-3L top view Package Marking and Ordering Information Device Marking Device Device Package HM1404B HM1404B TO-220-3L Reel Size - 1 Tape width - Quantity - +0% 40VDS／±20VGS／130A(ID) N-Channel Enha ncement Mode MOSFET Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS ID IDP IS TJ TSTG Drain-Source Voltage Gate –Source Voltage Parameter Continuous Drain Current 300us Pulsed Drain Current Tested Diode Continuous Forward Current Operating Junction Temperature Storage Temperature Range TC=100°C TC=25°C Typical Unit 40 V ±20 V 100 A 130 A 300 A 30 A 150 °C -55 ~ 150 °C Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA IDSS VGS(th) Zero Gate Voltage Drain Current VDS=32V,VGS=0V TJ=85°C Gate Threshold Voltage VDS=VGS,ID=250uA IGSS Gate Leakage Current RDS(on)1 Drain-Source On-Resistance VGS=±20V, VDS=0V VGS=10V, ID=30A Diode Characteristics VSD1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics2 RG Gate Resistance ISD=30A,VGS=0V ISD=30A, dISD/dt=100A/us VGS=0V, VDS=0V, Frequency=1MHz Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS=0V, VDS=20V Frequency=1MHz td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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