HM1404C Datasheet | H&M Semiconductor

N-Channel Enhancement Mode Power MOSFET DESCRIPTION The HM1404& uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. GENERAL Features - VDS = 40V,ID =170A RDS(ON) < 3.7mΩ @ VGS=10V (Typ:2.7mΩ) - Special process technology for high ESD capability - High density cell design for ultra low Rdson - Fully characterized Avalanche voltage and current - Good stability and uniformity with high EAS - Excellent package for good heat dissipation Application - Power switching application - Hard Switched and High Frequency Circuits - Uninterruptible Power Supply Schematic diagram HM1404& Marking and...