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HM150N03

Manufacturer: H&M Semiconductor

HM150N03 datasheet by H&M Semiconductor.

HM150N03 datasheet preview

HM150N03 Datasheet Details

Part number HM150N03
Datasheet HM150N03-HMSemiconductor.pdf
File Size 479.79 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM150N03 page 2 HM150N03 page 3

HM150N03 Overview

The HM150N03 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM150N03 Key Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply
  • Tape width
  • Quantity
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HM150N03 Distributor

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