HM15N10K Overview
Description
The HM15N10K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Key Features
- VDS =100V,ID =15A RDS(ON) < 90mΩ @ VGS=10V (Typ:75mΩ) RDS(ON) < 100mΩ @ VGS=4.5V (Typ:80mΩ)
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
