HM15N25F
HM15N25F is N-channel Enhanced VDMOSFET manufactured by H&M Semiconductor.
HM1)
General Description：
VDSS
HM15N25F, the silicon N-channel Enhanced VDMOSFETs, is
A obtained by the self-aligned planar Technology which reduce the
PD(TC=25℃)
W conduction loss, improve switching performance and enhance
RDS(ON)Typ
Ω the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is 72), which accords with the Ro HS standard.
Features
：
- Fast Switching
- Low ON Resistance(Rdson≤0.47Ω)
Marking and pin assignment
- 100% Single Pulse avalanche energy Test
Applications：
Automotive、DC Motor Control and Class D Amplifier.
Absolute（Tc= 25℃ unless otherwise specified）：
Symbol Parameter
VDSS
IDMa1 VGS dv/dt a2 PD TJ，Tstg
Drain-to-Source Voltage Continuous Drain Current Continuous Drain Current TC = 100 °C Pulsed Drain Current Gate-to-Source Voltage Peak Diode Recovery dv/dt Power Dissipation Operating Junction and Storage Temperature Range
TO-220F top view
Rating
250 15 10.5 45 ±30 5.0 75 150，- 55 to 150
Units
V A A A V V/ns W ℃
Electrical Characteristics（Tc= 25℃ unless otherwise specified）：
OFF Characteristics
Symbol...
