HM15N25F Overview
Description
： VDSS 250 V HM15N25F, the silicon N-channel Enhanced VDMOSFETs, is ID 15 A obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 75 W conduction loss, improve switching performance and enhance RDS(ON)Typ 0.18 Ω the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.47Ω) Marking and pin assignment
- 100% Single Pulse avalanche energy Test
