HM15N25F Description
： VDSS 250 V HM15N25F, the silicon N-channel Enhanced VDMOSFETs, is ID 15 A obtained by the self-aligned planar Technology which reduce the PD(TC=25℃) 75 W conduction loss, improve switching performance and enhance RDS(ON)Typ 0.18 Ω the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is 72), which accords with the...
HM15N25F Key Features
- Fast Switching
- Low ON Resistance(Rdson≤0.47Ω)
- 100% Single Pulse avalanche energy Test