HM1607 Description
The HM1607 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM.
HM1607 Key Features
- VDS=75V; ID=150A@ VGS=10V; RDS(ON)<6.3mΩ @ VGS=10V
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
- Table 1