HM1607
HM1607 is N-Channel Trench Power MOSFET manufactured by H&M Semiconductor.
N-Channel Trench Power MOSFET
General Description
The HM1607 is N-channel MOS Field Effect Transistor designed for high current switching applications. Rugged EAS capability and ultra low RDS(ON) is suitable for PWM.
Features
- VDS=75V; ID=150A@ VGS=10V; RDS(ON)<6.3mΩ @ VGS=10V
- Ultra Low On-Resistance
- High UIS and UIS 100% Test
Application
- Hard Switched and High Frequency Circuits
- Uninterruptible Power Supply
To-220 Top View
Schematic Diagram
VDS = 75V ID= 150A RDS(ON)= 5.0mΩ
Package Marking and Ordering Information
Device Marking
Device
Device Package
TO-220
Reel Size
- Table 1....
