Datasheet4U Logo Datasheet4U.com

HM16N50F Datasheet 500v N-channel MOSFET

Manufacturer: H&M Semiconductor

Overview: HM16N50 / HM16N50F 500V N-Channel MOSFET General.

This datasheet includes multiple variants, all published together in a single manufacturer document.

General Description

This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode.

These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.

Key Features

  • - 16A, 500V, RDS(on)typ. = 305mΩ@VGS = 10 V - Low gate charge ( typical 52nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D GDS TO-220 GDS TO-220F G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25℃) - Continuous (TC = 100℃) - Pulsed (Note 1) Gate-Source Voltage Single Pulsed Avalanche Energy.

More Datasheets from H&M Semiconductor

Part Number Description
HM16N50 500V N-Channel MOSFET
HM16N60F N-channel Enhanced VDMOSFET
HM16N65F N-channel Enhanced VDMOSFET
HM1607 N-Channel Trench Power MOSFET
HM1615 Micropower Step-Up DC/DC Converters
HM1628 LED Driver
HM16P12D P-Channel Enhancement Mode Power MOSFET
HM100N03 N-Channel Enhancement Mode Power MOSFET
HM100N03D N-Channel Enhancement Mode Power MOSFET
HM100N03GA N-Channel Enhancement Mode Power MOSFET

HM16N50F Distributor