HM16N50F Datasheet | H&M Semiconductor

HM16N50 / HM16N50F 500V N-Channel MOSFET General Description This Power MOSFET is produced using Maple semi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology. Features - 16A, 500V, RDS(on)typ. = 305mΩ@VGS = 10 V - Low gate charge ( typical 52n C) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability TO-220 TO-220F...