HM16P12D Overview
Description
The HM16P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features - VDS = -12V,ID = -16A RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V - Advanced trench MOSFET process technology - Ultra low on-resistance with low gate charge.
Key Features
- VDS = -12V,ID = -16A RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V
- Advanced trench MOSFET process technology
- Ultra low on-resistance with low gate charge
