HM16P12D
HM16P12D is P-Channel Enhancement Mode Power MOSFET manufactured by H&M Semiconductor.
P-Channel Enhancement Mode Power MOSFET
Description
The HM16P12D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.
General Features
- VDS = -12V,ID = -16A RDS(ON) < 22mΩ @ VGS=-2.5V RDS(ON) < 18mΩ @ VGS=-4.5V
- Advanced trench MOSFET process technology
- Ultra low on-resistance with low gate charge
Application
- PWM applications
- Load switch
- Battery charge in cellular handset
S Schematic diagram
Pin assignment
DFN2X2-6L bottom view
Package marking and ordering information
Device Marking
Device
Device Package
DFN2X2-6L
Reel Size
- Tape Width
- Quantity
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