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HM180N02

Manufacturer: H&M Semiconductor

HM180N02 datasheet by H&M Semiconductor.

HM180N02 datasheet preview

HM180N02 Datasheet Details

Part number HM180N02
Datasheet HM180N02-HMSemiconductor.pdf
File Size 370.40 KB
Manufacturer H&M Semiconductor
Description N-Channel Enhancement Mode Power MOSFET
HM180N02 page 2 HM180N02 page 3

HM180N02 Overview

The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

HM180N02 Key Features

  • High density cell design for ultra low Rdson
  • Fully characterized avalanche voltage and current
  • Good stability and uniformity with high EAS
  • Excellent package for good heat dissipation
  • Special process technology for high ESD capability
  • Power switching application
  • Hard switched and high frequency circuits
  • Uninterruptible power supply
  • Tape width
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HM180N02 Distributor

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