HM180N02 Overview
Description
The +01 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
Key Features
- VDS =20V,ID =185A RDS(ON) <2.0 mΩ @ VGS=4.5V RDS(ON) <2.4mΩ @ VGS=2.5V
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Good stability and uniformity with high EAS
- Excellent package for good heat dissipation
