HM18N20K Description
The HM18N20K uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.
HM18N20K Key Features
- VDS =200V,ID =18A
- High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Low gate to drain charge to reduce switching losses
- Power switching application
- Hard switched and high frequency circuits
- Uninterruptible power supply
- Tape width
- Quantity