HM1N6035 Description
： VDSS 600 HM1N60PR, the silicon N-channel Enhanced ID 1.0 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 which reduce the conduction loss, improve switching RDS(ON)Typ 9 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. The package form is SOT-89-3L, which accords with the RoHS...