HM1N6035 Overview
Description
： VDSS 600 HM1N60PR, the silicon N-channel Enhanced ID 1.0 VDMOSFETs, is obtained by the self-aligned planar Technology PD (TC=25℃) 3 which reduce the conduction loss, improve switching RDS(ON)Typ 9 performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.
Key Features
- Fast Switching
- Low ON Resistance(Rdson≤10.5Ω)
- Low Gate Charge (Typical Data:6.0nC)
- Low Reverse transfer capacitances(Typical:4pF) z 100% Single Pulse avalanche energy Test
